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STB230NH03L N-channel 30V - 80A - D2PAK STripFETTM Power MOSFET Features Type STB230NH03L VDSS 30V RDS(on) < 3m ID 80A(1) 1. This value is limited by package RDS(on) Qg industry's benchmark Conduction losses reduced Switching losses reduced Low threshold device 1 3 DPAK Description This product utilizes the latest advanced design rules of ST's proprietary STripFETTM technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications Switching applications - Specifically designed and optimized for high efficiency DC/DC converters - OR-ing Order code Part number STB230NH03L Marking B230NH03L Package DPAK Packaging Tape & reel June 2007 Rev1 1/13 www.st.com 13 Contents STB230NH03L Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STB230NH03L Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID(1) ID(1) ID(2) IDM (3) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (continuous) at TC=25C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 30 20 250 178 80 1000 300 2 -55 to 175 Unit V V A A A A W W/C C PTOT(4) TJ Operating junction temperature 1. This value is silicon limited 2. This value is limited by package 3. Pulse width limited by safe operating area 4. This value is rated according to Rthj-c Table 2. Symbol RthJC RthJA Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.5 62.5 300 Unit C/W C/W C Table 3. Symbol IAS EAS(1) Avalanche data Parameter Avalanche current Single pulse avalanche energy Value 60 1150 Unit A mJ 1. Starting Tj=25C, ID=IAV, VDD=24V 3/13 Electrical characteristics STB230NH03L 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS= 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA V m VDS = 30V, Zero gate voltage drain current (VGS = 0) VDS = 30V,Tc=125C Gate body leakage current (VDS = 0) VGS = 20V 1 1.5 2.3 Gate threshold voltage VDS= VGS, ID = 250A Static drain-source on resistance VGS= 10V, ID= 40A 2.5 3 Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 4700 1600 85 72 15 11 Max. Unit pF pF pF nC nC nC VDS =10V, f=1 MHz, VGS=0 VDD=15V, ID = 60A VGS =10V (see Figure 13) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain Gate input resistance 5.5 4/13 STB230NH03L Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Test conditions VDD=15V, ID=60A, RG=4.7, VGS=10V (see Figure 12) VDD=15V, ID=60A, RG=4.7, VGS=10V (see Figure 12) Min. Typ. 11 322 Max. Unit ns ns Turn-off delay time Fall time 123 102 ns ns Table 7. Symbol ISD (1) ISDM (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=40A, VGS=0 ISD=120A, di/dt = 100A/s, VDD=20V, Tj=25C (see Figure 17) ISD=120A, di/dt = 100A/s, VDD=20V, Tj=150C (see Figure 17) 42 34.7 1.6 Test conditions Min. Typ. Max. 250 1000 1.3 Unit A A V ns nC A VSD(3) trr Qrr IRRM trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current 47 41.3 1.8 ns nC A 1. This value is silicon limited 2. Pulse width limited by safe operating area 3. Pulsed: pulse duration=300s, duty cycle 1.5% 5/13 Electrical characteristics STB230NH03L 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature 6/13 STB230NH03L Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/13 Test circuit STB230NH03L 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/13 STB230NH03L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STB230NH03L D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 10/13 STB230NH03L Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 11/13 Revision history STB230NH03L 6 Revision history Table 8. Date 08-Jun-2007 Revision history Revision 1 Initial release. Changes 12/13 STB230NH03L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13 |
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